Direct growth of uniform wafer-scale two-dimensional (2D) layered materials using a universal method is of vital importance for\nutilizing 2D layers into practical applications. Here, we report on the structural and transport properties of large-scale few-layer\nMoS2 back-gated field effect transistors (FETs), fabricated using conventional pulsed laser deposition (PLD) technique. Raman\nspectroscopy and transmission electron microscopy results confirmed that the obtained MoS2 layers on SiO2/Si substrate are\nmultilayers. The FETs devices exhibit a relative high on/off ratio of 5 Ã?â?? 102 and mobility of 0.124 cm2VâË?â??1SâË?â??1. Our results suggest that\nthe PLD would be a suitable pathway to grow 2D layers for future industrial device applications.
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